No. |
Part Name |
Description |
Manufacturer |
1 |
1N3655 |
Microwave S-band Mixer NF=8.3 to 6.0 dB |
Motorola |
2 |
1N3655A |
Microwave S-band Mixer NF=8.3 to 6.0 dB |
Motorola |
3 |
1N3655B |
Microwave S-band Mixer NF=8.3 to 6.0 dB |
Motorola |
4 |
1N4655 |
Zener Diode 5.6V 1W |
Motorola |
5 |
1N5655 |
Transient Voltage Suppressor |
Microsemi |
6 |
1N5655 |
Diode TVS Single Uni-Dir 66.4V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
7 |
1N5655A |
Transient Voltage Suppressor |
Microsemi |
8 |
1N5655A |
Diode TVS Single Uni-Dir 70.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
9 |
1N5655E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
10 |
2N1655 |
Silicon NPN Transistor |
Motorola |
11 |
2N1655 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
12 |
2N2655 |
Silicon NPN Transistor |
Motorola |
13 |
2N3655 |
35-A SILICON CONTROLLED RECTIFIERS |
General Electric Solid State |
14 |
2N3655 |
THYRISTOR |
Motorola |
15 |
2N3655 |
Thyristor SCR 200V 200A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
16 |
2N3655 |
Thyristors - fast recoveries series |
SESCOSEM |
17 |
2N5655 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
18 |
2N5655 |
Trans GP BJT NPN 250V 1A 3-Pin TO-126 Box |
New Jersey Semiconductor |
19 |
2N5655 |
Plastic NPN Silicon High-Voltage Power Transistor |
ON Semiconductor |
20 |
2N5655 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
21 |
2N5655-D |
Plastic NPN Silicon High-Voltage Power Transistor |
ON Semiconductor |
22 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
23 |
2N655 |
Germanium PNP Transistor |
Motorola |
24 |
2N655 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
25 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
26 |
2N6550 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
27 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
28 |
2N6551 |
Trans GP BJT NPN 60V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
29 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
30 |
2N6552 |
Trans GP BJT NPN 80V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
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