| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CY8C3665LTI-044 |
PSoC� 3 CY8C36 Programmable System-on-Chip |
Cypress |
| 2 |
CY8C3665LTI-044T |
PSoC� 3 CY8C36 Programmable System-on-Chip |
Cypress |
| 3 |
CY8C3665LTI-199 |
PSoC� 3 CY8C36 Programmable System-on-Chip |
Cypress |
| 4 |
CY8C3665LTI-199T |
PSoC� 3 CY8C36 Programmable System-on-Chip |
Cypress |
| 5 |
CY8C3865LTI-014 |
PSoC� 3 CY8C38 Programmable System-on-Chip |
Cypress |
| 6 |
CY8C3865LTI-014T |
PSoC� 3 CY8C38 Programmable System-on-Chip |
Cypress |
| 7 |
CY8C3865LTI-205 |
PSoC� 3 CY8C38 Programmable System-on-Chip |
Cypress |
| 8 |
CY8C3865LTI-205T |
PSoC� 3 CY8C38 Programmable System-on-Chip |
Cypress |
| 9 |
HM5164165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 10 |
HM5164165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 11 |
HM5165165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 12 |
HM5165165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 13 |
HM51W16165LTT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14 |
HM51W16165LTT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 15 |
HM51W16165LTT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 16 |
HM51W18165LTT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 17 |
HM51W18165LTT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 18 |
HM51W18165LTT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 19 |
ISPLSI2064VL-165LT100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 20 |
ISPLSI2064VL-165LT44 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 21 |
ISPLSI2096VL-165LT128 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 22 |
ISPLSI5256VE-165LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
| 23 |
ISPLSI5256VE-165LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
| 24 |
ISPLSI5256VE-165LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
| 25 |
ISPLSI5256VE-165LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
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