| No. |
Part Name |
Description |
Manufacturer |
| 1 |
KT865P11 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .220 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter . |
Optek Technology |
| 2 |
KT865P15 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .220 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter . |
Optek Technology |
| 3 |
LC65P1104 |
On-Chip UVEPROM 4-Bit Single-Chip Microcontroller |
SANYO |
| 4 |
LC65P1104 |
One-Time Programmable 4-Bit Single-Chip Microcontroller |
SANYO |
| 5 |
MCT3A65P100F2 |
65A / 1000V / P-Type MOS-Controlled Thyristor (MCT) |
Intersil |
| 6 |
MCT3D65P100F2 |
65A / 1000V / P-Type MOS-Controlled Thyristor (MCT) |
Intersil |
| 7 |
MCTA65P100F1 |
65A / 1000V P-Type MOS Controlled Thyristor (MCT) |
Intersil |
| 8 |
MCTA65P100F113 |
65A, 1000V P-Type MOS Controlled Thyristor |
Intersil |
| 9 |
MCTV65P100F1 |
65A / 1000V P-Type MOS Controlled Thyristor (MCT) |
Intersil |
| 10 |
NDL7565P1 |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION |
NEC |
| 11 |
NDL7565P1 |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION |
NEC |
| 12 |
NDL7565P1 |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION |
NEC |
| 13 |
NDL7565P1 |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION |
NEC |
| 14 |
NDL7565P1C |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION |
NEC |
| 15 |
OPB365P11 |
Slotted optical switch |
Optek Technology |
| 16 |
OPB365P15 |
Slotted optical switch |
Optek Technology |
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