| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ150 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 135V(min), 165V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE120A |
Ppk=1500W, Vc=165V transient voltage suppressor |
MCC |
| 3 |
1.5KE120CA |
Ppk=1500W, Vc=165V transient voltage suppressor |
MCC |
| 4 |
1.5KE150 |
135- 165V transient voltage suppressor |
DC Components |
| 5 |
1.5KE150 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 135V(min), 165V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 6 |
1N5139B |
Diode VAR Cap Single 65V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 7 |
1N5141B |
Diode VAR Cap Single 65V 12pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 8 |
1N5144C |
Diode VAR Cap Single 65V 22pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 9 |
1N6071 |
Diode TVS Single Bi-Dir 165V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 10 |
2N2101 |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 11 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 12 |
2N2102 |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 13 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 14 |
2N4036 |
Trans GP BJT PNP 65V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 15 |
2N5641 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor |
SGS Thomson Microelectronics |
| 16 |
2N5642 |
V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistor |
Motorola |
| 17 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
| 18 |
2N5643 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor |
SGS Thomson Microelectronics |
| 19 |
2N5780 |
Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 20 |
2N5781 |
Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 21 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
| 22 |
2N5784 |
Trans GP BJT NPN 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 23 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
| 24 |
3T072A |
65V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 25 |
3T072B |
65V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 26 |
489D104X050A65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 27 |
489D105X050D65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 28 |
489D106X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 29 |
489D154X050A65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 30 |
489D155X050E65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
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