No. |
Part Name |
Description |
Manufacturer |
1 |
1617-35 |
35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz |
GHz Technology |
2 |
1660 |
Marking for NE98203 part number, 03 NEC package |
NEC |
3 |
1N1660 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
4 |
1N1660 |
Rectifier Diode |
Motorola |
5 |
1N3660 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
6 |
1N3660 |
30A Silicon Rectifier Diode 100V |
Motorola |
7 |
1N3660 |
Rectifier Diode |
Motorola |
8 |
1N3660 |
Diode Switching 100V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
9 |
1N3660R |
Standard Rectifier (trr more than 500ns) |
Microsemi |
10 |
1N3660R |
30A Silicon Rectifier Diode 100V |
Motorola |
11 |
1N4660 |
Zener Diode 9.1V 1W |
Motorola |
12 |
1N5660 |
Transient Voltage Suppressor |
Microsemi |
13 |
1N5660 |
Diode TVS Single Uni-Dir 105V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
14 |
1N5660A |
Transient Voltage Suppressor |
Microsemi |
15 |
1N5660A |
Diode TVS Single Uni-Dir 111V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
16 |
1N5660E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
17 |
1N660 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
18 |
1N660 |
General purpose low diode. Working inverse voltage 100V. |
Fairchild Semiconductor |
19 |
1N660 |
Silicon Signal Diode |
Motorola |
20 |
1N660 |
DIODE 0.5A 2DIE |
New Jersey Semiconductor |
21 |
1N660 |
Silicon Switching Diode |
Texas Instruments |
22 |
1N660 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
23 |
1N660A |
Signal Diode |
Motorola |
24 |
1N660A |
DIODE 0.5A 2DIE |
New Jersey Semiconductor |
25 |
1N6628 |
Diode Switching 660V 1.75A 2-Pin Case E |
New Jersey Semiconductor |
26 |
1N6660 |
Schottky Rectifier |
Microsemi |
27 |
1N6660R |
Schottky Rectifier |
Microsemi |
28 |
1S1660 |
Rectifier diode |
TOSHIBA |
29 |
1S1660R |
Rectifier diode |
TOSHIBA |
30 |
2020-6600-06 |
0.5-1 GHz, directional couplers mini, octave bandwidth |
MA-Com |
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