| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD669A |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 2 |
2SD669A |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 3 |
2SD669A |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 4 |
2SD669A-B |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 5 |
2SD669A-C |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 6 |
AD669AN |
Monolithic 16-Bit DACPORT |
Analog Devices |
| 7 |
AD669AQ |
Monolithic 16-Bit DACPORT |
Analog Devices |
| 8 |
AD669AR |
Monolithic 16-Bit DACPORT |
Analog Devices |
| 9 |
AD7669AN |
LC2MOS Complete, 8-Bit Analog I/0 Systems |
Analog Devices |
| 10 |
AD7669AR |
LC2MOS Complete, 8-Bit Analog I/0 Systems |
Analog Devices |
| 11 |
ASM3P2669AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 12 |
ASM3P2669AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 13 |
ASM3P2669AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 14 |
ASM3P2669AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 15 |
ASM3P2669AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 16 |
CSD669A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
Continental Device India Limited |
| 17 |
CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 18 |
CSD669AC |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 19 |
HI669A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 20 |
HJ669A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 21 |
HSD669A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 22 |
J669A |
Mini size of Discrete semiconductor elements |
SINYORK |
| 23 |
K4R271669A |
Direct RDRAM |
Samsung Electronic |
| 24 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 25 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 26 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 27 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 28 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 29 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 30 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
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