| No. |
Part Name |
Description |
Manufacturer |
| 1 |
232266296716 |
PTC Thermistors For Degaussing, Dual, Mono And Double Mono Cased |
Vishay |
| 2 |
2N6716 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
| 3 |
2N6716 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 4 |
2N6716 |
0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE |
Continental Device India Limited |
| 5 |
2N6716 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 6 |
2N6716 |
Trans GP BJT NPN 60V 2A 3-Pin(3+Tab) TO-237 Tape and Box |
New Jersey Semiconductor |
| 7 |
2N6716 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 8 |
5962-86716032A |
LC2MOS ± 15 V High Speed, Quad SPST Switch |
Analog Devices |
| 9 |
5962-8671603EA |
LC2MOS ± 15 V High Speed, Quad SPST Switch |
Analog Devices |
| 10 |
5962F9671601VEC |
Radiation Hardened 4-Bit Synchronous Counter |
Intersil |
| 11 |
5962F9671601VXC |
Radiation Hardened 4-Bit Synchronous Counter |
Intersil |
| 12 |
CD671615A |
POW-R-BLOK Dual SCR/Diode Isolated Module 150 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 13 |
IRF6716M |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. |
International Rectifier |
| 14 |
IRF6716MTR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. |
International Rectifier |
| 15 |
IRHMS67160 |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low Ohmic TO-254AA package. Also available in 300, 600 and 1000kRad. |
International Rectifier |
| 16 |
IRHMS67160SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low Ohmic TO-254AA package. Also available in 300kRad. |
International Rectifier |
| 17 |
IRHMS67164 |
150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Low-Ohmic package. Also available with 300 kRads Total Dose Rating. |
International Rectifier |
| 18 |
IRHMS67164SCS |
150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Low-Ohmic package. Also available with 300 kRads Total Dose Rating. |
International Rectifier |
| 19 |
IRHNA67160 |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available in 300, 600 and 1000kRad. |
International Rectifier |
| 20 |
IRHNA67160SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available in 300kRad. |
International Rectifier |
| 21 |
IRHNA67164 |
150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available with 300 kRads Total Dose Rating. |
International Rectifier |
| 22 |
IRHNA67164SCS |
150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available with 300 kRads Total Dose Rating. |
International Rectifier |
| 23 |
L6716 |
2/3/4 phase controller with embedded drivers for Intel VR11.1 |
ST Microelectronics |
| 24 |
L6716TR |
2/3/4 phase controller with embedded drivers for Intel VR11.1 |
ST Microelectronics |
| 25 |
MAX6716 |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 26 |
MAX6716A |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 27 |
MAX6716AUTSYD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 28 |
MAX6716AUTTGD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 29 |
MAX6716AUTVHD3+T |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 30 |
MAX6716UTLTD3-T |
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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