No. |
Part Name |
Description |
Manufacturer |
1 |
2N6727 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
2 |
2N6727 |
0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
3 |
2N6727 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
4 |
2N6727 |
Trans GP BJT PNP 40V 2A 3-Pin(3+Tab) TO-237 Box |
New Jersey Semiconductor |
5 |
2N6727 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
6 |
A6727 |
Single-phase PWM controller for automotive applications |
ST Microelectronics |
7 |
A6727TR |
Single-phase PWM controller for automotive applications |
ST Microelectronics |
8 |
CR6727A |
Triple video driver hybrid amplifier |
Philips |
9 |
HCD66727A03 |
Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function |
Hitachi Semiconductor |
10 |
HCD66727A03BP |
Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function |
Hitachi Semiconductor |
11 |
HCD66727A04 |
Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function |
Hitachi Semiconductor |
12 |
HCD66727A04BP |
Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function |
Hitachi Semiconductor |
13 |
HD66727 |
Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function |
Hitachi Semiconductor |
14 |
HD66727A03TA0L |
Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function |
Hitachi Semiconductor |
15 |
HD66727A04TA0L |
Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function |
Hitachi Semiconductor |
16 |
IRF6727M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
17 |
IRF6727MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
18 |
IRF6727MTRPBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
19 |
L6727 |
Single phase PWM controller |
ST Microelectronics |
20 |
L6727TR |
Single phase PWM controller |
ST Microelectronics |
21 |
MAX6727 |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
22 |
MAX6727A |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
23 |
MAX6727AKASDD3+T |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
24 |
MAX6727KALTD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
25 |
MAX6727KALTD3+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
26 |
MAX6727KALTD3-T |
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
27 |
MAX6727KAMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
28 |
MAX6727KAMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
29 |
MAX6727KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
30 |
MAX6727KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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