No. |
Part Name |
Description |
Manufacturer |
1 |
IRHNJ67434 |
550V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package |
International Rectifier |
2 |
IRHNJ67434SCS |
550V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package |
International Rectifier |
3 |
IRHY67434CM |
550V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
International Rectifier |
4 |
IRHY67434CMSCS |
550V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
International Rectifier |
5 |
L6743B |
High current MOSFET driver |
ST Microelectronics |
6 |
L6743BTR |
High current MOSFET driver |
ST Microelectronics |
7 |
L6743D |
High current MOSFET driver |
ST Microelectronics |
8 |
L6743DTR |
High current MOSFET driver |
ST Microelectronics |
9 |
L6743Q |
High current MOSFET driver |
ST Microelectronics |
10 |
L6743QTR |
High current MOSFET driver |
ST Microelectronics |
11 |
MAX6743 |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
12 |
MAX6743XKLTD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
13 |
MAX6743XKLTD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
14 |
MAX6743XKLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
15 |
MAX6743XKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
16 |
MAX6743XKMSD3-T |
Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
17 |
MAX6743XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
18 |
MAX6743XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
19 |
MAX6743XKRHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
20 |
MAX6743XKRVD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
21 |
MAX6743XKRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
22 |
MAX6743XKRYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
23 |
MAX6743XKSDD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
24 |
MAX6743XKSDD3-T |
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
25 |
MAX6743XKSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
26 |
MAX6743XKSHD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
27 |
MAX6743XKSHD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
28 |
MAX6743XKSHD3-T |
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
29 |
MAX6743XKSVD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
30 |
MAX6743XKSVD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
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