| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE160CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 152.0 V(min), 168.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE350CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 333.0 V(min), 368.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 3 |
1N4760 |
68.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 4 |
1N5756B |
68.0V Voltage Reference Diode |
Philips |
| 5 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 6 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 7 |
AD7721 |
CMOS, 12-/16-Bit, 312.5 kHz/468.75 kHz Sigma-Delta ADC |
Analog Devices |
| 8 |
AD7721AN |
CMOS 16-Bit, 468.75 kHz, Sigma-Delta ADC |
Analog Devices |
| 9 |
AD7721AR |
CMOS 16-Bit, 468.75 kHz, Sigma-Delta ADC |
Analog Devices |
| 10 |
AD7721AR-REEL |
CMOS, 12-/16-Bit, 312.5 kHz/468.75 kHz Sigma-Delta ADC |
Analog Devices |
| 11 |
AD7721SQ |
CMOS 16-Bit, 468.75 kHz, Sigma-Delta ADC |
Analog Devices |
| 12 |
AUIRF7648M2TR |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 68.0 amperes optimized with low on resistance. |
International Rectifier |
| 13 |
AUIRF7648M2TR1 |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 68.0 amperes optimized with low on resistance. |
International Rectifier |
| 14 |
D2525P911 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 191.1. Wavelength 1568.77. Tolerance +-0.4nm. |
Agere Systems |
| 15 |
D2525P916 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 191.6. Wavelength 1564.68. Tolerance +-0.4nm. |
Agere Systems |
| 16 |
DSC1121CI2-168.0000 |
Clock and Timing - Oscillators |
Microchip |
| 17 |
FR0868M00-DI11 |
868.00 MHz One-port SAW Resonator |
etc |
| 18 |
M670-168.0400 |
VOLTAGE CONTROLLED SAW OSCILLATOR |
Integrated Circuit Systems |
| 19 |
MM3Z68VB |
68.0V 200mW 2% Zener, SOD323F |
Fairchild Semiconductor |
| 20 |
MM3Z68VC |
68.0V 200mW 5% Zener, SOD323F |
Fairchild Semiconductor |
| 21 |
MV1646 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 68.0pF |
Motorola |
| 22 |
MV2113 |
Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 68.0pF |
Motorola |
| 23 |
NTE5281AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 68.0V. Zener test current Izt = 180mA. |
NTE Electronics |
| 24 |
NX8562LB687-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1568.77 nm. Frequency 191.10 THz. Anode ground. FC-PC connector. |
NEC |
| 25 |
NX8562LF687-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1568.77 nm. Frequency 191.10 THz. Anode floating. FC-PC connector. |
NEC |
| 26 |
NX8563LB687-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1568.77 nm. Frequency 191.10 THz. FC-PC connector. Anode ground. |
NEC |
| 27 |
NX8563LF687-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1568.77 nm. Frequency 191.10 THz. FC-PC connector. Anode floating. |
NEC |
| 28 |
P1168.102T |
N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
National Semiconductor |
| 29 |
SMV2113-01 |
Capacitance:68.0pF; VBR:30V min; 250mW; surface mount 2043 series hyperabrupt tuning diode |
Knox Semiconductor Inc |
| 30 |
SMV2113-09 |
Capacitance:68.0pF; VBR:30V min; 250mW; surface mount 2043 series hyperabrupt tuning diode |
Knox Semiconductor Inc |
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