| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3682B |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 2 |
1N3682B |
Zener Diode 13V |
Motorola |
| 3 |
ECA0JHG682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 4 |
ECA0JM682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) M-A |
Panasonic |
| 5 |
ECA0JMH682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) MH-A |
Panasonic |
| 6 |
ECA1AHG682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 7 |
ECA1AM682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) M-A |
Panasonic |
| 8 |
ECA1AMH682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) MH-A |
Panasonic |
| 9 |
ECEC1CA682BJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HA-TS |
Panasonic |
| 10 |
ECOS1AA682BA |
Large Can Aluminum Electrolytic Capacitors |
Panasonic |
| 11 |
ECOS1CA682BA |
Large Can Aluminum Electrolytic Capacitors |
Panasonic |
| 12 |
ECOS1EA682BA |
Large Can Aluminum Electrolytic Capacitors |
Panasonic |
| 13 |
ECOS1VA682BA |
Large Can Aluminum Electrolytic Capacitors |
Panasonic |
| 14 |
EEUFC0J682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FC-A |
Panasonic |
| 15 |
EEUFK1A682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FK-A |
Panasonic |
| 16 |
EEUFM0J682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FM-A |
Panasonic |
| 17 |
EEUFR1A682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FR-A |
Panasonic |
| 18 |
EEUHD1A682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) HD-A |
Panasonic |
| 19 |
EEUHD1C682B |
Aluminum Electrolytic Capacitors (Radial Lead Type) HD-A |
Panasonic |
| 20 |
K7I163682B |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 21 |
K7I163682B-FC16 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 22 |
K7I163682B-FC20 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 23 |
K7I163682B-FC25 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 24 |
K7I163682B-FC30 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 25 |
K7J163682B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM |
Samsung Electronic |
| 26 |
K7R163682B |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM |
Samsung Electronic |
| 27 |
LMC6682BIM |
Low Voltage / Rail-To-Rail Input and Output CMOS |
National Semiconductor |
| 28 |
LMC6682BIMX |
Low Voltage / Rail-To-Rail Input and Output CMOS |
National Semiconductor |
| 29 |
LMC6682BIN |
Low Voltage / Rail-To-Rail Input and Output CMOS |
National Semiconductor |
| 30 |
MIC4682BM |
PRECISION CURRENT LIMIT SO-8 SUPERSWITCHER BUCK REGULATOR |
Micrel Semiconductor |
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