Datasheets for 69B-

Datasheets found :: 39 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	1N5269B-1	Zener Voltage Regulator Diode	Microsemi
2	1N5269B-1E3	Zener Voltage Regulator Diode	Microsemi
3	1N5269B-LCC3	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	SemeLAB
4	1N969B-1	22 V, 400 mW silicon zener diode	BKC International Electronics
5	1N969B-1	METALLURGICALLY BONDED	Compensated Devices Incorporated
6	1N969B-1	Zener Voltage Regulator Diode	Microsemi
7	1N969B-1E3	Zener Voltage Regulator Diode	Microsemi
8	CZRC5369B-G	Zener Diodes, PD=5Watts, VZ=51V	Comchip Technology
9	JAN1N969B-1	Zener Voltage Regulator Diode	Microsemi
10	JAN1N969B-1	Zener Voltage Regulator Diode	Microsemi
11	JANTX1N969B-1	Zener Voltage Regulator Diode	Microsemi
12	JANTX1N969B-1	Zener Voltage Regulator Diode	Microsemi
13	JANTXV1N969B-1	Zener Voltage Regulator Diode	Microsemi
14	JANTXV1N969B-1	Zener Voltage Regulator Diode	Microsemi
15	K4R271669B-MCG6	256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
16	K4R271669B-MCK7	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung Electronic
17	K4R271669B-MCK8	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic
18	K4R271669B-N(M)CG6	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
19	K4R271669B-N(M)CK7	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
20	K4R271669B-NB(M)CCK8	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
21	K4R271669B-NCG6	256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
22	K4R271669B-NCK7	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz	Samsung Electronic
23	K4R271669B-NCK8	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz	Samsung Electronic
24	K4R271869B-MCG6	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
25	K4R271869B-MCK7	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung Electronic
26	K4R271869B-MCK8	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic
27	K4R271869B-NCG6	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
28	K4R271869B-NCK7	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung Electronic
29	K4R271869B-NCK8	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic
30	K4R441869B-N(M)CG6	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic

Datasheets found :: 39 Page: | 1 | 2 |