| No. |
Part Name |
Description |
Manufacturer |
| 1 |
16CYQ100C |
16A 100V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 2 |
16CYQ100CSCS |
16A 100V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package DLA Number 1N7070CCT3 |
International Rectifier |
| 3 |
16CYQ150C |
16A 150V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 4 |
16YQ100CSCS |
16A 100V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 5 |
16YQ150C |
16A 150V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 6 |
16YQ150CSCS |
16A 150V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 7 |
1N3880 |
Diffused silicon junction rectifier designed for HF range 6A 100V |
Texas Instruments |
| 8 |
1N3880R |
Diffused silicon junction rectifier designed for HF range 6A 100V, reverse polarity |
Texas Instruments |
| 9 |
1N3990 |
6A 1000V Rectifier Diode |
Motorola |
| 10 |
2N3773 |
Power 16A 140V Discrete NPN |
ON Semiconductor |
| 11 |
2N6401 |
Silicon Controlled Rectifier 16A 100V |
ON Semiconductor |
| 12 |
2N6609 |
Power 16A 140V Discrete PNP |
ON Semiconductor |
| 13 |
2N6931 |
Trans GP BJT PNP 60V 0.6A 14-Pin TO-116 |
New Jersey Semiconductor |
| 14 |
2N6932 |
Trans GP BJT PNP 60V 0.6A 14-Pin TO-116 |
New Jersey Semiconductor |
| 15 |
2N6933 |
Trans GP BJT PNP 60V 0.6A 14-Pin TO-116 |
New Jersey Semiconductor |
| 16 |
2N6934 |
Trans GP BJT PNP 60V 0.6A 14-Pin TO-116 |
New Jersey Semiconductor |
| 17 |
2N6935 |
Trans GP BJT PNP 60V 0.6A 14-Pin TO-116 |
New Jersey Semiconductor |
| 18 |
6CC13 |
Silicon diffused junction rectifier 6A 150V |
TOSHIBA |
| 19 |
6CD13 |
Silicon diffused junction rectifier 6A 150V |
TOSHIBA |
| 20 |
6DRR1P |
6A 100V FAST RECOVERY DIODE |
IPRS Baneasa |
| 21 |
6NC12 |
Silicon diffused junction rectifier 6A 1000V |
TOSHIBA |
| 22 |
6NF11 |
Silicon alloy-diffused junction avalanche rectifier 6A 1000V 2kW |
TOSHIBA |
| 23 |
6QF11 |
Silicon alloy-diffused junction avalanche rectifier 6A 1200V 2kW |
TOSHIBA |
| 24 |
6SI1 |
6A 100V SILICON RECTIFIER DIODE |
IPRS Baneasa |
| 25 |
6SI10 |
6A 1000V SILICON RECTIFIER DIODE |
IPRS Baneasa |
| 26 |
6SI10R |
6A 1000V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
| 27 |
6SI12 |
6A 1200V SILICON RECTIFIER DIODE |
IPRS Baneasa |
| 28 |
6SI12R |
6A 1200V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
| 29 |
6SI15 |
6A 1500V SILICON RECTIFIER DIODE |
IPRS Baneasa |
| 30 |
6SI15R |
6A 1500V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
| | | |
