| No. |
Part Name |
Description |
Manufacturer |
| 1 |
16CYQ045C |
16A 45V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 2 |
16CYQ045CSCS |
16A 45V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 3 |
16SCYQ045C |
16A 45V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 4 |
16SCYQ045CSCS |
16A 45V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 5 |
16SYJQ045C |
16A 45V Hi-Rel Schottky Common Anode Diode in a D2-Pak package |
International Rectifier |
| 6 |
16SYJQ045CSCS |
16A 45V Hi-Rel Schottky Common Anode Diode in a D2-Pak package |
International Rectifier |
| 7 |
16SYQ045C |
16A 45V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 8 |
16SYQ045CSCS |
16A 45V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 9 |
16YQ045C |
16A 45V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 10 |
16YQ045CSCS |
16A 45V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 11 |
1N3883 |
Diffused silicon junction rectifier designed for HF range 6A 400V |
Texas Instruments |
| 12 |
1N3883R |
Diffused silicon junction rectifier designed for HF range 6A 400V, reverse polarity |
Texas Instruments |
| 13 |
2N6084 |
Trans GP BJT NPN 18V 6A 4-Pin Style M135 |
New Jersey Semiconductor |
| 14 |
2N6403 |
Silicon Controlled Rectifier 16A 400V |
ON Semiconductor |
| 15 |
6DRR4P |
6A 400V FAST RECOVERY DIODE |
IPRS Baneasa |
| 16 |
6GC12 |
Silicon diffused junction rectifier 6A 400V |
TOSHIBA |
| 17 |
6SI4 |
6A 400V SILICON RECTIFIER DIODE |
IPRS Baneasa |
| 18 |
6Si4P |
6A 400V RECITIFIER DIODE |
IPRS Baneasa |
| 19 |
6SI4R |
6A 400V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
| 20 |
APT1004R2KN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm |
Advanced Power Technology |
| 21 |
APT1004RCN |
POWER MOS IV 1000V 3.6A 4.00 Ohm |
Advanced Power Technology |
| 22 |
APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm |
Advanced Power Technology |
| 23 |
BFL4037 |
N-Channel Power MOSFET 500 V 16A 430 mOhm TO-220F-3FS |
ON Semiconductor |
| 24 |
BLF145 |
Trans RF MOSFET N-CH 65V 6A 4-Pin SOT-123A |
New Jersey Semiconductor |
| 25 |
BLF177 |
Trans RF MOSFET N-CH 125V 16A 4-Pin CRFM |
New Jersey Semiconductor |
| 26 |
BLW87 |
Trans GP BJT NPN 18V 6A 4-Pin SOT-123A |
New Jersey Semiconductor |
| 27 |
BLY89C |
Trans GP BJT NPN 18V 6A 4-Pin CRPM |
New Jersey Semiconductor |
| 28 |
CPH6350 |
P-Channel Power MOSFET -30V -6A 43mOhm Single CPH6 |
ON Semiconductor |
| 29 |
D16A4 |
16A 400V Controlled Avalanche Rectifier Diode |
IPRS Baneasa |
| 30 |
D16A4R |
16A 400V Controlled Avalanche Rectifier Diode |
IPRS Baneasa |
| | | |
