No. |
Part Name |
Description |
Manufacturer |
1 |
GS71116AJ-10 |
10ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
2 |
GS71116AJ-10I |
10ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
3 |
GS71116AJ-12 |
12ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
4 |
GS71116AJ-12I |
12ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
5 |
GS72116AJ-10 |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
6 |
GS72116AJ-10I |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
7 |
GS72116AJ-12 |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
8 |
GS72116AJ-12I |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
9 |
GS74116AJ-10 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
10 |
GS74116AJ-10I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
11 |
GS74116AJ-10IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
12 |
GS74116AJ-10T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
13 |
GS74116AJ-12 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
14 |
GS74116AJ-12I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
15 |
GS74116AJ-12IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
16 |
GS74116AJ-12T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
17 |
KM41256AJ-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
18 |
KM41256AJ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
19 |
KM41256AJ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
20 |
M5M54R16AJ-10 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
21 |
M5M54R16AJ-12 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
22 |
M5M54R16AJ-15 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
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