No. |
Part Name |
Description |
Manufacturer |
1 |
BCR6AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
2 |
BCR6AM-12 |
Triac 6 Amperes/400-600 Volts |
Powerex Power Semiconductors |
3 |
BCR6AM-12L |
Triac 6 Amperes/400-600 Volts |
Powerex Power Semiconductors |
4 |
BCR6AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5 |
BCR6AM-8 |
Triac 6 Amperes/400-600 Volts |
Powerex Power Semiconductors |
6 |
BCR6AM-8L |
Triac 6 Amperes/400-600 Volts |
Powerex Power Semiconductors |
7 |
LC35256AM-10 |
256 K (32768 words x 8 bit) SRAM with OE and CE pins |
SANYO |
8 |
LC35256AM-10LV |
256 K (32768 words x 8 bit) SRAM with OE and CE pins |
SANYO |
9 |
LC35256AM-12LV |
256 K (32768 words x 8 bit) SRAM with OE and CE pins |
SANYO |
10 |
LC35256AM-15LV |
256 K (32768 words x 8 bit) SRAM with OE and CE pins |
SANYO |
11 |
LC35256AM-70 |
256 K (32768 words x 8 bit) SRAM with OE and CE pins |
SANYO |
12 |
LC35256AM-85 |
256 K (32768 words x 8 bit) SRAM with OE and CE pins |
SANYO |
13 |
LM236AM-2.5 |
Reference Diode |
National Semiconductor |
14 |
MH4V36AM-6 |
FAST PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM |
Mitsubishi Electric Corporation |
15 |
MH4V36AM-7 |
FAST PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM |
Mitsubishi Electric Corporation |
16 |
MHP8566AM-1 |
Rad-Hard DC to DC Converters |
Microsemi |
17 |
MHP8566AM-2 |
Rad-Hard DC to DC Converters |
Microsemi |
18 |
NEZ6472-6AM-I |
GaAs FET |
NEC |
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