No. |
Part Name |
Description |
Manufacturer |
1 |
AS7C3128PFS36AP-3.5TQC |
128K x 36 synchronous SRAM, 166 MHz |
Alliance Semiconductor |
2 |
CAT28C16AP-20 |
16K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
3 |
CAT28C16AP-20T |
16K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
4 |
HM62256AP-10 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
5 |
HM62256AP-12 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
6 |
HM62256AP-15 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
7 |
HM62256AP-8 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
8 |
HN27C256AP-12 |
256K(32K x 8-bit) UV and OTP EPROM |
Hitachi Semiconductor |
9 |
HN27C256AP-15 |
256K(32K x 8-bit) UV and OTP EPROM |
Hitachi Semiconductor |
10 |
HN58C256AP-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
11 |
HN58C256AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
12 |
HN58C256AP-85 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
13 |
HN58C256AP-85 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
14 |
HN58V66AP-10 |
64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A) |
Hitachi Semiconductor |
15 |
HN58V66AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
16 |
HN58V66AP-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
17 |
HY62256AP-55 |
32Kx8bit CMOS SRAM, standby current=1mA, 55ns |
Hynix Semiconductor |
18 |
HY62256AP-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
19 |
HY62256AP-85 |
32Kx8bit CMOS SRAM, standby current=1mA, 85ns |
Hynix Semiconductor |
20 |
HY62256AP-I |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
21 |
HY62256AP-I-55 |
32Kx8bit CMOS SRAM, standby current=1mA, 55ns |
Hynix Semiconductor |
22 |
HY62256AP-I-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
23 |
HY62256AP-I-85 |
32Kx8bit CMOS SRAM, standby current=1mA, 85ns |
Hynix Semiconductor |
24 |
KM41256AP-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
25 |
KM41256AP-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
26 |
KM41256AP-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
27 |
TC5516AP-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
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