| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM4716AP-1 |
16384-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 2 |
HM62256AP-10 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 3 |
HM62256AP-12 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 4 |
HM62256AP-15 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 5 |
HN27C256AP-12 |
256K(32K x 8-bit) UV and OTP EPROM |
Hitachi Semiconductor |
| 6 |
HN27C256AP-15 |
256K(32K x 8-bit) UV and OTP EPROM |
Hitachi Semiconductor |
| 7 |
HN58C256AP-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 8 |
HN58C256AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 9 |
HN58V66AP-10 |
64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A) |
Hitachi Semiconductor |
| 10 |
HN58V66AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 11 |
HN58V66AP-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 12 |
KM41256AP-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
| 13 |
KM41256AP-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
| 14 |
KM41256AP-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
| | | |
