| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28C256API-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 2 |
28C256API-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 3 |
28C256API-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 4 |
28C256API-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5 |
28C256API-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 6 |
28C256API-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 7 |
28C256API-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 8 |
28C256API-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 9 |
CAT28C16API-20 |
16K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
| 10 |
CAT28C16API-20T |
16K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
| 11 |
HN58V66API-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 12 |
HN58V66API-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 13 |
ISD1016API |
Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations |
etc |
| 14 |
ISD1016API |
Single-chip voice record/playback device 16-second durations |
Information Storage Devices |
| 15 |
KIA7806API |
1A 3-Terminal Voltage Regulator |
Korea Electronics (KEC) |
| 16 |
KIA78R06API |
1A 4-Terminal Low Drop(ON/OFF Controllable) |
Korea Electronics (KEC) |
| | | |
