| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28C256ASC-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 2 |
28C256ASC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 3 |
28C256ASC-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 4 |
28C256ASC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 5 |
28C256ASC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 6 |
28C256ASC-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 7 |
28C256ASC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 8 |
28C256ASC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 9 |
28C256ASI-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 10 |
28C256ASI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 11 |
28C256ASI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 12 |
28C256ASI-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 13 |
28C256ASI-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 14 |
28C256ASI-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 15 |
28C256ASI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 16 |
28C256ASI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 17 |
28C256ASM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 18 |
28C256ASM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 19 |
28C256ASM-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 20 |
28C256ASM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 21 |
28C256ASM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 22 |
28C256ASM-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 23 |
28C256ASM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 24 |
28C256ASM-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 25 |
2N2326AS |
Silicon Controlled Rectifier |
Microsemi |
| 26 |
74LV06AS14-13 |
HEX INVERTERS WITH SCHMITT TRIGGER INPUTS |
Diodes |
| 27 |
74LV86AS14-13 |
QUADRUPLE 2-INPUT EXCULSIVE OR GATES |
Diodes |
| 28 |
74LVC06AS14-13 |
HEX INVERTERS WITH OPEN DRAIN OUTPUTS |
Diodes |
| 29 |
74LVC126AS14-13 |
QUADRUPLE 3-STATE BUFFERS |
Diodes |
| 30 |
74LVC86AS14-13 |
QUADRUPLE 2-INPUT EXCLUSIVE OR GATES |
Diodes |
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