| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GS72116AT-8 |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
| 2 |
GS72116AT-8I |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
| 3 |
GS72116AT-8I |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
| 4 |
GS840F36AT-8 |
8ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
| 5 |
GS840F36AT-8.5 |
8.5ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
| 6 |
GS840F36AT-8.5I |
8.5ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
| 7 |
GS840F36AT-8I |
8ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
| 8 |
GS840FH36AT-8 |
8ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
| 9 |
GS840FH36AT-8.5 |
8.5ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
| 10 |
GS840FH36AT-8.5I |
8.5ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
| 11 |
GS840FH36AT-8I |
8ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
| 12 |
GS880F36AT-8.5 |
8.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 13 |
GS880F36AT-8.5I |
8.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 14 |
HN58C256AT-85 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 15 |
HN58C256AT-85 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 16 |
HN58C256AT-85E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 17 |
LC35256AT-85 |
256 K (32768 words X 8 bits) SRAM with OE and CE control Pins |
SANYO |
| 18 |
SG7806AT-883B |
Positive Voltage Regulators (non-LDO) |
Microsemi |
| | | |
