No. |
Part Name |
Description |
Manufacturer |
1 |
AT93C46B-10PC |
3-Wire Serial E2PROMs |
Atmel |
2 |
AT93C46B-10PC-2.5 |
3-Wire Serial E2PROMs |
Atmel |
3 |
AT93C46B-10PC-2.7 |
3-Wire Serial E2PROMs |
Atmel |
4 |
AT93C46B-10PI |
3-Wire Serial E2PROMs |
Atmel |
5 |
AT93C46B-10PI-2.5 |
3-Wire Serial E2PROMs |
Atmel |
6 |
AT93C46B-10PI-2.7 |
3-Wire Serial E2PROMs |
Atmel |
7 |
AT93C46B-10SC |
3-Wire Serial E2PROMs |
Atmel |
8 |
AT93C46B-10SC-2.5 |
3-Wire Serial E2PROMs |
Atmel |
9 |
AT93C46B-10SC-2.7 |
3-Wire Serial E2PROMs |
Atmel |
10 |
AT93C46B-10SI |
3-Wire Serial E2PROMs |
Atmel |
11 |
AT93C46B-10SI-2.5 |
3-Wire Serial E2PROMs |
Atmel |
12 |
AT93C46B-10SI-2.7 |
3-Wire Serial E2PROMs |
Atmel |
13 |
DS1836B-10+ |
3.3V/5V MicroManager |
MAXIM - Dallas Semiconductor |
14 |
GS78116B-10 |
10ns 512K x 16 8Mb asynchronous SRAM |
GSI Technology |
15 |
GS78116B-10I |
10ns 512K x 16 8Mb asynchronous SRAM |
GSI Technology |
16 |
GS84036B-100 |
100MHz 12ns 128K x 32 4Mb sync NBT SRAM |
GSI Technology |
17 |
GS84036B-100I |
100MHz 12ns 128K x 32 4Mb sync NBT SRAM |
GSI Technology |
18 |
GS840E36B-100 |
100MHz 12ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
19 |
GS840E36B-100I |
100MHz 12ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
20 |
GS840H36B-100 |
100MHz 12ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
21 |
GS840H36B-100I |
100MHz 12ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
22 |
GS88236B-100 |
100MHz 12ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
23 |
GS88236B-100I |
100MHz 100ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
24 |
GS882Z36B-100 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
GSI Technology |
25 |
GS882Z36B-100I |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
GSI Technology |
26 |
HIF6B-100DA-1.27DSA |
1.27mm Pitch Two-Piece Connector |
Hirose Electric |
27 |
HIF6B-100PA-1.27DS |
1.27mm Pitch Two-Piece Connector |
Hirose Electric |
28 |
HIF6B-100PA-1.27DSA |
1.27mm Pitch Two-Piece Connector |
Hirose Electric |
29 |
KM44C256B-10 |
100ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
30 |
M27C256B-10B1 |
256 Kbit (32Kb x 8) EPROM, 5V, 100ns |
SGS Thomson Microelectronics |
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