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Datasheets found :: 147
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No. | Part Name | Description | Manufacturer |
---|---|---|---|
1 | AT93C46B-10PC | 3-Wire Serial E2PROMs | Atmel |
2 | AT93C46B-10PC-2.5 | 3-Wire Serial E2PROMs | Atmel |
3 | AT93C46B-10PC-2.7 | 3-Wire Serial E2PROMs | Atmel |
4 | AT93C46B-10PI | 3-Wire Serial E2PROMs | Atmel |
5 | AT93C46B-10PI-2.5 | 3-Wire Serial E2PROMs | Atmel |
6 | AT93C46B-10PI-2.7 | 3-Wire Serial E2PROMs | Atmel |
7 | AT93C46B-10SC | 3-Wire Serial E2PROMs | Atmel |
8 | AT93C46B-10SC-2.5 | 3-Wire Serial E2PROMs | Atmel |
9 | AT93C46B-10SC-2.7 | 3-Wire Serial E2PROMs | Atmel |
10 | AT93C46B-10SI | 3-Wire Serial E2PROMs | Atmel |
11 | AT93C46B-10SI-2.5 | 3-Wire Serial E2PROMs | Atmel |
12 | AT93C46B-10SI-2.7 | 3-Wire Serial E2PROMs | Atmel |
13 | DS1836B-10+ | 3.3V/5V MicroManager | MAXIM - Dallas Semiconductor |
14 | GS78116B-10 | 10ns 512K x 16 8Mb asynchronous SRAM | GSI Technology |
15 | GS78116B-10I | 10ns 512K x 16 8Mb asynchronous SRAM | GSI Technology |
16 | GS84036B-100 | 100MHz 12ns 128K x 32 4Mb sync NBT SRAM | GSI Technology |
17 | GS84036B-100I | 100MHz 12ns 128K x 32 4Mb sync NBT SRAM | GSI Technology |
18 | GS840E36B-100 | 100MHz 12ns 128K x 36 4Mb sync burst SRAM | GSI Technology |
19 | GS840E36B-100I | 100MHz 12ns 128K x 36 4Mb sync burst SRAM | GSI Technology |
20 | GS840H36B-100 | 100MHz 12ns 128K x 36 4Mb sync burst SRAM | GSI Technology |
21 | GS840H36B-100I | 100MHz 12ns 128K x 36 4Mb sync burst SRAM | GSI Technology |
22 | GS88236B-100 | 100MHz 12ns 256K x 36 8Mb S/DCD sync burst SRAM | GSI Technology |
23 | GS88236B-100I | 100MHz 100ns 256K x 36 8Mb S/DCD sync burst SRAM | GSI Technology |
24 | GS882Z36B-100 | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs | GSI Technology |
25 | GS882Z36B-100I | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs | GSI Technology |
26 | HIF6B-100DA-1.27DSA | 1.27mm Pitch Two-Piece Connector | Hirose Electric |
27 | HIF6B-100PA-1.27DS | 1.27mm Pitch Two-Piece Connector | Hirose Electric |
28 | HIF6B-100PA-1.27DSA | 1.27mm Pitch Two-Piece Connector | Hirose Electric |
29 | KM44C256B-10 | 100ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode | Samsung Electronic |
30 | M27C256B-10B1 | 256 Kbit (32Kb x 8) EPROM, 5V, 100ns | SGS Thomson Microelectronics |
Datasheets found :: 147
|