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Datasheets found :: 34
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 1 | BR246D-80A1-12V-012L | Relays | Microsemi |
| 2 | BR246D-80A2-12V-015L | Relays | Microsemi |
| 3 | BR246D-80B1-6V-011L | Relays | Microsemi |
| 4 | BR246D-80B2-12V-014L | Relays | Microsemi |
| 5 | BR246D-80B3-12V-017L | Relays | Microsemi |
| 6 | BR246D-80C1-6V-010L | Relays | Microsemi |
| 7 | BR246D-80C2-12V-013L | Relays | Microsemi |
| 8 | BR246D-80C3-12V-016L | Relays | Microsemi |
| 9 | BR246D-80G3-12V-018L | Relays | Microsemi |
| 10 | BR246D-80XX-12V | Relays | Microsemi |
| 11 | HMN12816D-85 | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V | etc |
| 12 | HMN12816D-85I | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V | etc |
| 13 | IC61SF25636D-8.5B | 8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM | ICSI |
| 14 | IC61SF25636D-8.5BI | 8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM | ICSI |
| 15 | IC61SF25636D-8.5TQ | 8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM | ICSI |
| 16 | IC61SF25636D-8.5TQI | 8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM | ICSI |
| 17 | IS61LF25636D-8.5B | 256K x 36 synchronous flow-through static RAM | Integrated Silicon Solution Inc |
| 18 | IS61LF25636D-8.5TQ | 256K x 36 synchronous flow-through static RAM | Integrated Silicon Solution Inc |
| 19 | IS61LF25636D-8.5TQI | 256K x 36 synchronous flow-through static RAM | Integrated Silicon Solution Inc |
| 20 | IS61SF25636D-8.5B | 256K x 36 synchronous flow-through static RAM | Integrated Silicon Solution Inc |
| 21 | IS61SF25636D-8.5TQ | 256K x 36 synchronous flow-through static RAM | Integrated Silicon Solution Inc |
| 22 | IS61SF25636D-8.5TQI | 256K x 36 synchronous flow-through static RAM | Integrated Silicon Solution Inc |
| 23 | IS61SF25636D-8B | 256K x 36 synchronous flow-through static RAM | Integrated Silicon Solution Inc |
| 24 | IS61SF25636D-8TQ | 256K x 36 synchronous flow-through static RAM | Integrated Silicon Solution Inc |
| 25 | KM44C256D-8 | 60ns; V(cc/in/out): -1.0 to 7.0V; 330mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode | Samsung Electronic |
| 26 | LH5496D-80 | CMOS 512 X 9 FIFO | SHARP |
| 27 | MC-4R128FKE6D-840 | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) | Elpida Memory |
| 28 | MC-4R128FKE6D-845 | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) | Elpida Memory |
| 29 | MC-4R256FKE6D-840 | Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT) | Elpida Memory |
| 30 | MC-4R256FKE6D-845 | Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT) | Elpida Memory |
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Datasheets found :: 34
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