| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DST3906DJ-7 |
DUAL 40V PNP SURFACE MOUNT TRANSISTOR |
Diodes |
| 2 |
KM416C256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V |
Samsung Electronic |
| 3 |
KM416C256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V |
Samsung Electronic |
| 4 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
| 5 |
KM416V256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V |
Samsung Electronic |
| 6 |
KM416V256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V |
Samsung Electronic |
| 7 |
KM416V256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
| 8 |
M5M564R16DJ-10 |
1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
| 9 |
M5M564R16DJ-12 |
1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
| 10 |
M5M564R16DJ-15 |
1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
| 11 |
MT4LC8M8B6DJ-5 |
DRAM |
Micron Technology |
| 12 |
MT4LC8M8B6DJ-5S |
DRAM |
Micron Technology |
| 13 |
MT4LC8M8B6DJ-6 |
DRAM |
Micron Technology |
| 14 |
MT4LC8M8B6DJ-6S |
DRAM |
Micron Technology |
| | | |
