No. |
Part Name |
Description |
Manufacturer |
1 |
DS0026H-SMD |
5 MHz Two Phase MOS Clock Driver |
National Semiconductor |
2 |
M38500E6H-SP |
RAM size:192 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
3 |
M38500E6H-SS |
RAM size:192 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
4 |
M38501E6H-SP |
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
5 |
M38501E6H-SS |
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
6 |
M38502E6H-SP |
RAM size:384 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
7 |
M38502E6H-SS |
RAM size:384 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
8 |
M38503E6H-SP |
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
9 |
M38503E6H-SS |
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
10 |
M38504E6H-SP |
RAM size:640 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
11 |
M38504E6H-SS |
RAM size:640 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
12 |
M38505E6H-SP |
RAM size:768 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
13 |
M38505E6H-SS |
RAM size:768 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
14 |
M38506E6H-SP |
RAM size:896 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
15 |
M38506E6H-SS |
RAM size:896 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
16 |
M38507E6H-SP |
RAM size:1024 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
17 |
M38507E6H-SS |
RAM size:1024 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
18 |
M38508E6H-SP |
RAM size:1536 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
19 |
M38508E6H-SS |
RAM size:1536 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
20 |
M38509E6H-SP |
RAM size:2048 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
21 |
M38509E6H-SS |
RAM size:2048 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
22 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
23 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
24 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
25 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
26 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
27 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
28 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
29 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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