| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRKLF102-06HK |
600V Doubler Circuit Positive Control Inverter Thyristor/Diode in a INT-A-Pak package |
International Rectifier |
| 2 |
IRKTF102-06HK |
600V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package |
International Rectifier |
| 3 |
IRKTF72-06HK |
600V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package |
International Rectifier |
| 4 |
L048 |
Three Phase Half Controlled Rectifier Bridge/ B6HK |
IXYS Corporation |
| 5 |
MAX6366HKA23-T |
2.38 V, SOT23, low-power, mP supervisory circuit with battery backup and chip-enable gating |
MAXIM - Dallas Semiconductor |
| 6 |
MAX6366HKA26+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 7 |
MAX6366HKA26+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 8 |
MAX6366HKA26-T |
2.70 V, SOT23, low-power, mP supervisory circuit with battery backup and chip-enable gating |
MAXIM - Dallas Semiconductor |
| 9 |
MAX6366HKA29+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 10 |
MAX6366HKA29+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 11 |
MAX6366HKA29-T |
3.00 V, SOT23, low-power, mP supervisory circuit with battery backup and chip-enable gating |
MAXIM - Dallas Semiconductor |
| 12 |
MAX6366HKA31+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 13 |
MAX6366HKA31+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 14 |
MAX6366HKA31-T |
3.15 V, SOT23, low-power, mP supervisory circuit with battery backup and chip-enable gating |
MAXIM - Dallas Semiconductor |
| 15 |
MAX6366HKA44+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 16 |
MAX6366HKA44+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 17 |
MAX6366HKA44-T |
4.50 V, SOT23, low-power, mP supervisory circuit with battery backup and chip-enable gating |
MAXIM - Dallas Semiconductor |
| 18 |
MAX6366HKA46+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 19 |
MAX6366HKA46+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 20 |
MAX6366HKA46-T |
4.75 V, SOT23, low-power, mP supervisory circuit with battery backup and chip-enable gating |
MAXIM - Dallas Semiconductor |
| 21 |
V53C16126HK30 |
High performance 128K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 22 |
V53C16126HK35 |
High performance 128K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 23 |
V53C16126HK40 |
High performance 128K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 24 |
V53C16126HK45 |
High performance 128K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 25 |
V53C16126HK60 |
High performance 128K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 26 |
V53C16256HK30 |
256K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 27 |
V53C16256HK35 |
256K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 28 |
V53C16256HK40 |
256K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 29 |
V53C16256HK45 |
256K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| 30 |
V53C16256HK50 |
256K x 16bit fast page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
| | | |
