| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1206KXXX |
High Voltage MLC Chip |
AVX Corporation |
| 2 |
29F4000 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY |
Macronix International |
| 3 |
5962-8767906KXA |
5962-8767906KXA · Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications |
Agilent (Hewlett-Packard) |
| 4 |
5962-8767906KXA |
5962-8767906KXA · Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications |
Agilent (Hewlett-Packard) |
| 5 |
8XC196LX |
8XC196Lx Supplement to 8X196Kx, 8X196Jx, 87C196CA User's Manual |
Intel |
| 6 |
ADSP-1016KX |
16x16-Bit CMOS Multiplier |
Analog Devices |
| 7 |
BM29F400B |
5-Volt Flash 256Kx16/512Kx8 |
Winbond Electronics |
| 8 |
BM29F400T |
5-Volt Flash 256Kx16/512Kx8 |
Winbond Electronics |
| 9 |
BQ4014 |
256Kx8 Nonvolatile SRAM, 5% Voltage Tolerance |
Texas Instruments |
| 10 |
BQ4014MB-120 |
256Kx8 Nonvolatile SRAM, 5% Voltage Tolerance |
Texas Instruments |
| 11 |
BQ4014MB-85 |
256Kx8 Nonvolatile SRAM, 5% Voltage Tolerance |
Texas Instruments |
| 12 |
BQ4014Y |
256Kx8 Nonvolatile SRAM, 10% Voltage Tolerance |
Texas Instruments |
| 13 |
BQ4014YMB-120 |
256Kx8 Nonvolatile SRAM, 10% Voltage Tolerance |
Texas Instruments |
| 14 |
BQ4014YMB-85 |
256Kx8 Nonvolatile SRAM, 10% Voltage Tolerance |
Texas Instruments |
| 15 |
BR13H-1.6KXX-26V |
Relays |
Microsemi |
| 16 |
BR25H128F-2C |
Automotive 125℃ Operation SPI BUS 128Kbit (16Kx8bit) EEPROM |
ROHM |
| 17 |
BR25H128F-2CE2 |
Automotive 125℃ Operation SPI BUS 128Kbit (16Kx8bit) EEPROM |
ROHM |
| 18 |
BR25H128F-2LB(H2) |
125°C Operation SPI BUS 128Kbit (16Kx8bit) EEPROM |
ROHM |
| 19 |
BR25H128F-2LBH2 |
125°C Operation SPI BUS 128Kbit (16Kx8bit) EEPROM |
ROHM |
| 20 |
BR25H128FJ-2C |
Automotive 125℃ Operation SPI BUS 128Kbit (16Kx8bit) EEPROM |
ROHM |
| 21 |
BR25H128FJ-2CE2 |
Automotive 125℃ Operation SPI BUS 128Kbit (16Kx8bit) EEPROM |
ROHM |
| 22 |
BS616LV4016 |
Asynchronous 4M(256Kx16) bits Static RAM |
Brilliance Semiconductor |
| 23 |
BS616LV4017 |
Asynchronous 4M(256Kx16) bits Static RAM |
Brilliance Semiconductor |
| 24 |
BS616LV4018 |
Asynchronous 4M(256Kx16) bits Static RAM |
Brilliance Semiconductor |
| 25 |
BS616UV4016 |
Asynchronous 4M(256Kx16) bits Static RAM |
Brilliance Semiconductor |
| 26 |
BS62LV2006 |
Asynchronous 2M(256Kx8) bits Static RAM |
Brilliance Semiconductor |
| 27 |
BS62LV2008 |
Asynchronous 2M(256Kx8) bits Static RAM |
Brilliance Semiconductor |
| 28 |
BS62LV2009 |
Asynchronous 2M(256Kx8) bits Static RAM |
Brilliance Semiconductor |
| 29 |
BS62UV2006 |
Asynchronous 2M(256Kx8) bits Static RAM |
Brilliance Semiconductor |
| 30 |
CY7C1352F |
4-Mbit (256Kx18) Pipelined SRAM with NoBL�� Architecture |
Cypress |
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