| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IXFH26N55Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 2 |
IXFH36N55Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 3 |
IXFH36N55Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 4 |
KT866N55 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 |
Optek Technology |
| 5 |
KT876N55 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches |
Optek Technology |
| 6 |
MTH6N55 |
Power Field Effect Transistor |
Motorola |
| 7 |
MTM6N55 |
N-CHANNEL TMOS POWER FET 6A 550V 1.5 ohms |
Motorola |
| 8 |
MTM6N55 |
Power Field Effect Transistor |
Motorola |
| 9 |
OPB866N55 |
SLOTTED OPTICAL SWITCH |
QT Optoelectronics |
| 10 |
SSH6N55 |
N-Channel Power MOSFET |
Samsung Electronic |
| 11 |
SSM6N55 |
N-Channel Power MOSFET |
Samsung Electronic |
| 12 |
SSM6N55NU |
Small-signal MOSFET 2 in 1 |
TOSHIBA |
| 13 |
SSP6N55 |
N-Channel Power MOSFET |
Samsung Electronic |
| 14 |
STL36N55M5 |
N-channel 550 V, 0.066 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 15 |
STP36N55M5 |
N-channel 550 V, 0.06 Ohm, 33 A, MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
| 16 |
STW36N55M5 |
N-channel 550 V, 0.06 Ohm, 33 A, MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
| | | |
