| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28LV256TI-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 2 |
28LV256TI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 3 |
28LV256TI-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 4 |
28LV256TI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5 |
28LV256TI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 6 |
28LV256TI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 7 |
28LV256TI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 8 |
28LV256TI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 9 |
BS62LV256TI |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit |
Brilliance Semiconductor |
| 10 |
BS62UV2006TI |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
| 11 |
BS62UV2006TI-10 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
| 12 |
BS62UV2006TI-85 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
| 13 |
BS62UV2006TIG10 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
| 14 |
BS62UV2006TIG85 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
| 15 |
BS62UV2006TIP85 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
| 16 |
BS62UV256TI |
Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit |
Brilliance Semiconductor |
| 17 |
HN58X2416TI |
Serial EEPROMs |
Hitachi Semiconductor |
| 18 |
HN58X2416TIE |
Memory>EEPROM>Serial EEPROM |
Renesas |
| 19 |
HN58X24256TI |
Serial EEPROMs |
Hitachi Semiconductor |
| 20 |
HN58X24256TIE |
Memory>EEPROM>Serial EEPROM |
Renesas |
| 21 |
HN58X2516TIE |
Memory>EEPROM>Serial EEPROM |
Renesas |
| 22 |
HN58X25256TIE |
Memory>EEPROM>Serial EEPROM |
Renesas |
| 23 |
IC42S16400-6TI |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM |
Integrated Circuit Solution Inc |
| 24 |
IC42S16400-6TIG |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM |
Integrated Circuit Solution Inc |
| 25 |
IC42S16400A-6TI |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM |
Integrated Circuit Solution Inc |
| 26 |
IC42S16400A-6TIG |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM |
Integrated Circuit Solution Inc |
| 27 |
IC42S16800-6TI |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Circuit Solution Inc |
| 28 |
IC42S16800-6TI(G) |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Circuit Solution Inc |
| 29 |
IC42S16800-6TIG |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Circuit Solution Inc |
| 30 |
IC42S16800L-6TI |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Circuit Solution Inc |
| | | |
