| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5631A |
Diode TVS Single Uni-Dir 7.02V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 2 |
1N6269A |
Diode TVS Single Uni-Dir 7.02V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 3 |
AM42-0039 |
6.4-7.025 GHz, GaAs MMIC VSAT power amplifier 2.0W |
MA-Com |
| 4 |
AM42-0039 |
GaAs MMIC VSAT Power Amplifier, 2W 6.40 - 7.025 GHz |
Tyco Electronics |
| 5 |
BZW06-7V0 |
Diode TVS Single Uni-Dir 7.02V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 6 |
BZW06-7V0B |
Diode TVS Single Bi-Dir 7.02V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 7 |
BZW06-7V4B |
Diode TVS Single Uni-Dir 7.02V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 8 |
D2525P901 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 190.1. Wavelength 1577.02. Tolerance +-0.4nm. |
Agere Systems |
| 9 |
NX8562LB770-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1577.02 nm. Frequency 190.10 THz. Anode ground. FC-PC connector. |
NEC |
| 10 |
NX8562LF770-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1577.02 nm. Frequency 190.10 THz. Anode floating. FC-PC connector. |
NEC |
| 11 |
NX8563LB770-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.02 nm. Frequency 190.10 THz. FC-PC connector. Anode ground. |
NEC |
| 12 |
NX8563LF770-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.02 nm. Frequency 190.10 THz. FC-PC connector. Anode floating. |
NEC |
| 13 |
P4KE8.2A |
Diode TVS Single Uni-Dir 7.02V 400W 2-Pin DO-41 |
New Jersey Semiconductor |
| 14 |
P4KE8.2CA |
Diode TVS Single Bi-Dir 7.02V 400W 2-Pin DO-41 |
New Jersey Semiconductor |
| 15 |
P6KE8.0C |
Diode TVS Single Uni-Dir 7.02V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 16 |
P6KE8.0CA |
Diode TVS Single Uni-Dir 7.02V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 17 |
P6KE8.2A |
Diode TVS Single Uni-Dir 7.02V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 18 |
P6KE8.2CA |
Diode TVS Single Bi-Dir 7.02V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 19 |
P6KE8.5CA |
Diode TVS Single Uni-Dir 7.02V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
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