| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP190 |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 2 |
15KP190C |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 3 |
1N5247A |
17 V, 7.4 mA, zener diode |
Leshan Radio Company |
| 4 |
1N5247C |
17 V, 7.4 mA, zener diode |
Leshan Radio Company |
| 5 |
1N5247D |
17 V, 7.4 mA, zener diode |
Leshan Radio Company |
| 6 |
1N6119 |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 7 |
1N6119A |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin |
New Jersey Semiconductor |
| 8 |
1N6119C |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 9 |
1N6119CA |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 10 |
1N6155 |
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 11 |
1N6155A |
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12 |
1N6155AUS |
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 13 |
2N7225 |
27.4A N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 14 |
ADC16DX370 |
Dual 16-bit 370 MSPS ADC, 7.4 Gbps JESD204B Outputs 56-WQFN -40 to 85 |
Texas Instruments |
| 15 |
ADC16DX370RME25 |
Dual 16-bit 370 MSPS ADC, 7.4 Gbps JESD204B Outputs 56-WQFN -40 to 85 |
Texas Instruments |
| 16 |
ADC16DX370RMER |
Dual 16-bit 370 MSPS ADC, 7.4 Gbps JESD204B Outputs 56-WQFN -40 to 85 |
Texas Instruments |
| 17 |
ADC16DX370RMET |
Dual 16-bit 370 MSPS ADC, 7.4 Gbps JESD204B Outputs 56-WQFN -40 to 85 |
Texas Instruments |
| 18 |
BZX79C7V1 |
Diode Zener Single 7.45V 5% 500mW 2-Pin ALF |
New Jersey Semiconductor |
| 19 |
BZX79C7V5 |
Diode Zener Single 7.45V 5% 500mW 2-Pin ALF |
New Jersey Semiconductor |
| 20 |
BZX85C2V7 |
Diode Zener Single 2.7V 7.4% 1.3W 2-Pin DO-41 |
New Jersey Semiconductor |
| 21 |
BZY91C7V5 |
Diode Zener Single 7.45V 6% 100W 2-Pin DO-5 |
New Jersey Semiconductor |
| 22 |
BZY91C7V5R |
Diode Zener Single 7.45V 6% 100W 2-Pin DO-5 |
New Jersey Semiconductor |
| 23 |
BZY93C7V5 |
Diode Zener Single 7.45V 6% 20W 2-Pin DO-4 |
New Jersey Semiconductor |
| 24 |
BZY93C7V5R |
Diode Zener Single 7.45V 6% 20W 2-Pin DO-4 |
New Jersey Semiconductor |
| 25 |
D2525P865 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 186.5. Wavelength 1607.47. Tolerance +-0.4nm. |
Agere Systems |
| 26 |
D2525P874 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 187.4. Wavelength 1599.75. Tolerance +-0.4nm. |
Agere Systems |
| 27 |
DSC1001DC5-037.4000 |
Clock and Timing - Oscillators |
Microchip |
| 28 |
DSC1001DC5-037.4000T |
Clock and Timing - Oscillators |
Microchip |
| 29 |
E2502H50 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1537.40 nm. Frequency 195.0 THz. |
Agere Systems |
| 30 |
FCD600N60Z |
N-Channel SuperFET� II MOSFET 600 V, 7.4 A, 600 m? |
Fairchild Semiconductor |
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