| No. |
Part Name |
Description |
Manufacturer |
| 1 |
30KW270 |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3 |
5KP170 |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4 |
5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5 |
DSC1003DL2-070.0000 |
Clock and Timing - Oscillators |
Microchip |
| 6 |
DSC1003DL2-070.0000T |
Clock and Timing - Oscillators |
Microchip |
| 7 |
P4SMAJ170-T1 |
Reverse stand-off voltage: 170.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 8 |
P4SMAJ170-T3 |
Reverse stand-off voltage: 170.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 9 |
P4SMAJ170A-T1 |
Reverse stand-off voltage: 170.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 10 |
P4SMAJ170A-T3 |
Reverse stand-off voltage: 170.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 11 |
P4SMAJ170C-T1 |
Reverse stand-off voltage: 170.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 12 |
P4SMAJ170C-T3 |
Reverse stand-off voltage: 170.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 13 |
P4SMAJ170CA-T1 |
Reverse stand-off voltage: 170.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 14 |
P4SMAJ170CA-T3 |
Reverse stand-off voltage: 170.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 15 |
SA170 |
170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 16 |
SA170A |
170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 17 |
SA170C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 170.00 V. Test current IT = 1 mA. |
Bytes |
| 18 |
SA170CA |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 170.00 V. Test current IT = 1 mA. |
Bytes |
| 19 |
SMAJ170 |
170.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 20 |
SMAJ170A |
170.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 21 |
SMBJ170 |
170.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 22 |
SMBJ170A |
170.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 23 |
SMCJ170 |
170.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 24 |
SMCJ170A |
170.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 25 |
SMDJ170 |
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 26 |
SMDJ170A |
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 27 |
SMLJ170 |
170.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 28 |
SMLJ170A |
170.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 29 |
TIP130 |
70.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 500 hFE. |
Continental Device India Limited |
| 30 |
TIP131 |
70.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 500 hFE. |
Continental Device India Limited |
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