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Datasheets for 7041

Datasheets found :: 54
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 5962-8670410V9A QML Class V Current Mode PWM Controller 0-XCEPT -55 to 125 Texas Instruments
2 5962-8670410VPA QML Class V Current Mode PWM Controller 8-CDIP -55 to 125 Texas Instruments
3 5962P8670411VPA Current Mode PWM Controller 8-CDIP -55 to 125 Texas Instruments
4 5962P8670411VYC Current Mode PWM Controller 10-CFP -55 to 125 Texas Instruments
5 ADS7041 Ultra-Low Power and Ultra-Small Size SAR ADC | 10-bit | 1MSPS | Single-Ended 8-X2QFN -40 to 125 Texas Instruments
6 ADS7041IDCUR Ultra-Low Power and Ultra-Small Size SAR ADC | 10-bit | 1MSPS | Single-Ended 8-VSSOP -40 to 125 Texas Instruments
7 ADS7041IDCUT Ultra-Low Power and Ultra-Small Size SAR ADC | 10-bit | 1MSPS | Single-Ended 8-VSSOP -40 to 125 Texas Instruments
8 ADS7041IRUGR Ultra-Low Power and Ultra-Small Size SAR ADC | 10-bit | 1MSPS | Single-Ended 8-X2QFN -40 to 125 Texas Instruments
9 BCM7041 Dual-Channel Digital Video/Audio MPEG-2 Encoder Broadcom
10 BGU7041 1 GHz wideband low-noise amplifier NXP Semiconductors
11 C7041 CCD multichannel detector head Hamamatsu Corporation
12 ISL70417SEH Rad Hard 40V Quad Precision Low Power Operational Amplifiers Intersil
13 ISL70419SEH Radiation Hardened 36V Quad Precision Low Power Operational Amplifier With Enhanced SET Performance Intersil
14 JV1N7041CCU1 20A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package DLA Number 1N7041CCU1 International Rectifier
15 JV1N7041CCU1 20A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package DLA Number 1N7041CCU1 International Rectifier
16 K4E170411D 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
17 K4E170411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
18 K4E170411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
19 K4E170412D 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
20 K4E170412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
21 K4E170412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
22 K4F170411C-B50 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
23 K4F170411C-B60 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
24 K4F170411C-F50 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
25 K4F170411C-F60 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
26 K4F170411D 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
27 K4F170411D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
28 K4F170411D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
29 K4F170412C-B50 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
30 K4F170412C-B60 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic


Datasheets found :: 54
Page: | 1 | 2 |



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