| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5962-8670410V9A |
QML Class V Current Mode PWM Controller 0-XCEPT -55 to 125 |
Texas Instruments |
| 2 |
5962-8670410VPA |
QML Class V Current Mode PWM Controller 8-CDIP -55 to 125 |
Texas Instruments |
| 3 |
5962P8670411VPA |
Current Mode PWM Controller 8-CDIP -55 to 125 |
Texas Instruments |
| 4 |
5962P8670411VYC |
Current Mode PWM Controller 10-CFP -55 to 125 |
Texas Instruments |
| 5 |
ADS7041 |
Ultra-Low Power and Ultra-Small Size SAR ADC | 10-bit | 1MSPS | Single-Ended 8-X2QFN -40 to 125 |
Texas Instruments |
| 6 |
ADS7041IDCUR |
Ultra-Low Power and Ultra-Small Size SAR ADC | 10-bit | 1MSPS | Single-Ended 8-VSSOP -40 to 125 |
Texas Instruments |
| 7 |
ADS7041IDCUT |
Ultra-Low Power and Ultra-Small Size SAR ADC | 10-bit | 1MSPS | Single-Ended 8-VSSOP -40 to 125 |
Texas Instruments |
| 8 |
ADS7041IRUGR |
Ultra-Low Power and Ultra-Small Size SAR ADC | 10-bit | 1MSPS | Single-Ended 8-X2QFN -40 to 125 |
Texas Instruments |
| 9 |
BCM7041 |
Dual-Channel Digital Video/Audio MPEG-2 Encoder |
Broadcom |
| 10 |
BGU7041 |
1 GHz wideband low-noise amplifier |
NXP Semiconductors |
| 11 |
C7041 |
CCD multichannel detector head |
Hamamatsu Corporation |
| 12 |
ISL70417SEH |
Rad Hard 40V Quad Precision Low Power Operational Amplifiers |
Intersil |
| 13 |
ISL70419SEH |
Radiation Hardened 36V Quad Precision Low Power Operational Amplifier With Enhanced SET Performance |
Intersil |
| 14 |
JV1N7041CCU1 |
20A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package DLA Number 1N7041CCU1 |
International Rectifier |
| 15 |
JV1N7041CCU1 |
20A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package DLA Number 1N7041CCU1 |
International Rectifier |
| 16 |
K4E170411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 17 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 18 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 19 |
K4E170412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 20 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 21 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 22 |
K4F170411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 23 |
K4F170411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 24 |
K4F170411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 25 |
K4F170411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 26 |
K4F170411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 27 |
K4F170411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 28 |
K4F170411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 29 |
K4F170412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 30 |
K4F170412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
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