No. |
Part Name |
Description |
Manufacturer |
1 |
114-90-624-41-117161 |
Dual-in-line sockets and headers / open frame / surface mount pick and place |
Precid-Dip Durtal |
2 |
114-91-624-41-117161 |
Dual-in-line sockets and headers / open frame / surface mount pick and place |
Precid-Dip Durtal |
3 |
114-Z1-624-41-117161 |
Dual-in-line sockets and headers / open frame / surface mount pick and place |
Precid-Dip Durtal |
4 |
7161 |
Submicro Axial Lead Lamp,Micro Axial Lead Lamps,Axial Lead Lamps |
Gilway Technical Lamp |
5 |
AN7161NFP |
BTL High Audio Power Amplifier |
Panasonic |
6 |
BQ771611DPJR |
Family Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
7 |
BQ771611DPJT |
Family Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
8 |
BQ771612 |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
9 |
BQ771612DPJR |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
10 |
BQ771612DPJT |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
11 |
CD671615A |
POW-R-BLOK Dual SCR/Diode Isolated Module 150 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
12 |
HV7161SPA2 |
CMOS Image Sensor with Image Signal Processing |
etc |
13 |
K4E171611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
14 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
15 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
16 |
K4E171612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
17 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
18 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
19 |
K4F171611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
20 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
21 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
22 |
K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
23 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
24 |
K4F171612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
25 |
LA7161NM |
RF Modulator Devices: VHF band RF modulator |
SANYO |
26 |
LA7161NV |
RF Modulator Devices: VHF band RF modulator |
SANYO |
27 |
LA7161V |
VHF Band RF Modulator |
SANYO |
28 |
M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
29 |
MCY7161 |
Pami�� dynamiczna RAM 1x16384 bity |
Ultra CEMI |
30 |
MN1871618 |
Microcomputers Application-Specific Standard-Product ICs |
Panasonic |
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