| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BQ771612 |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
| 2 |
BQ771612DPJR |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
| 3 |
BQ771612DPJT |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
| 4 |
K4E171612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 5 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 6 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 7 |
K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 8 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 9 |
K4F171612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 10 |
TLV716120275P |
Dual Channel, Capless, 150mA, LDO in 1.2mm x 1.2mm SON Package |
Texas Instruments |
| 11 |
TLV716120275PDPQR |
Dual Channel, Capless, 150mA, LDO in 1.2mm x 1.2mm SON Package 6-X2SON -40 to 125 |
Texas Instruments |
| 12 |
TLV716120275PDPQT |
Dual Channel, Capless, 150mA, LDO in 1.2mm x 1.2mm SON Package 6-X2SON -40 to 125 |
Texas Instruments |
| | | |
