Datasheets for 7166

Datasheets found :: 46 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	ADE7166	Single-Phase Energy Measurement IC with 8052 MCU, RTC, and LCD Driver	Analog Devices
2	CD471660	POW-R-BLOK Dual SCR/Diode Isolated Module 60 Amperes / Up to 1600 Volts	Powerex Power Semiconductors
3	CD471660A	1600V, 60A general purpose dual diode	Powerex Power Semiconductors
4	IDT72V71660	16K x 16K Time Slot Interchange Digital Switch, 3.3V	IDT
5	IDT72V71660BB	16K x 16K TSI, 64 I/O at 2/4/8 or 16Mbps, 3.3V	IDT
6	IDT72V71660BB	16K x 16K TSI, 64 I/O at 2/4/8 or 16Mbps, 3.3V	IDT
7	IDT72V71660DR	16K x 16K TSI, 64 I/O at 2/4/8 or 16Mbps, 3.3V	IDT
8	IDT72V71660DR	16K x 16K TSI, 64 I/O at 2/4/8 or 16Mbps, 3.3V	IDT
9	K4R271669A	Direct RDRAM	Samsung Electronic
10	K4R271669A-N(M)CK7	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
11	K4R271669A-N(M)CK8	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
12	K4R271669A-NB(M)CCG6	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
13	K4R271669AM-CG6	256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung Electronic
14	K4R271669AM-CK7	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
15	K4R271669AM-CK8	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
16	K4R271669AN-CG6	256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz.	Samsung Electronic
17	K4R271669AN-CK7	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
18	K4R271669AN-CK8	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
19	K4R271669B	Direct RDRAM	Samsung Electronic
20	K4R271669B	Direct RDRAM� Data Sheet	Samsung Electronic
21	K4R271669B-MCG6	256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
22	K4R271669B-MCK7	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung Electronic
23	K4R271669B-MCK8	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic
24	K4R271669B-N(M)CG6	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
25	K4R271669B-N(M)CK7	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
26	K4R271669B-NB(M)CCK8	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
27	K4R271669B-NCG6	256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
28	K4R271669B-NCK7	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz	Samsung Electronic
29	K4R271669B-NCK8	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz	Samsung Electronic
30	K4R271669D	Direct RDRAM� Data Sheet	Samsung Electronic

Datasheets found :: 46 Page: | 1 | 2 |