| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4716UR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 2 |
1N4716UR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 3 |
DAC716U |
16-Bit DIGITAL-TO-ANALOG CONVERTER with Serial Data Interface |
Burr Brown |
| 4 |
DAC716U |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Texas Instruments |
| 5 |
DAC716U/1K |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Texas Instruments |
| 6 |
DAC716UB |
16-Bit DIGITAL-TO-ANALOG CONVERTER with Serial Data Interface |
Burr Brown |
| 7 |
DAC716UB |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Texas Instruments |
| 8 |
DAC716UB/1K |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Texas Instruments |
| 9 |
DAC716UBG4 |
16-Bit Digital-to-Analog Converter with Serial Data Interface 16-SOIC -40 to 85 |
Texas Instruments |
| 10 |
DAC716UB_1K |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Burr Brown |
| 11 |
DAC716UK |
16-Bit DIGITAL-TO-ANALOG CONVERTER with Serial Data Interface |
Burr Brown |
| 12 |
DAC716UK |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Texas Instruments |
| 13 |
DAC716UK/1K |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Texas Instruments |
| 14 |
DAC716UK_1K |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Burr Brown |
| 15 |
DAC716U_1K |
16-Bit Digital-to-Analog Converter with Serial Data Interface |
Burr Brown |
| 16 |
K8D1716U |
16M Dual Bank NOR Flash Memory |
Samsung Electronic |
| 17 |
MAX6716UTLTD3-T |
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 18 |
MAX6716UTMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 19 |
MAX6716UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 20 |
MAX6716UTRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 21 |
MAX6716UTRHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 22 |
MAX6716UTRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 23 |
MAX6716UTRYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 24 |
MAX6716UTSDD3-T |
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 25 |
MAX6716UTSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 26 |
MAX6716UTSHD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 27 |
MAX6716UTSHD3+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 28 |
MAX6716UTSHD3-T |
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 29 |
MAX6716UTSVD3-T |
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 30 |
MAX6716UTSYD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
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