| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP170A |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 2 |
15KP170CA |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 3 |
1N116 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 4 |
1N117 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5 |
1N118 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 6 |
1N118A |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 7 |
1N126 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 8 |
1N126A |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 9 |
1N281 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 10 |
1N292 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 11 |
1N314 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 12 |
1N4148 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 13 |
1N4149 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 14 |
1N4150-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 15 |
1N4151 |
500mW 75 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 16 |
1N4153-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 17 |
1N4154-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 18 |
1N4446 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 19 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 20 |
1N4449 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 21 |
1N4449 |
High conductance ultra fast switching diode. Working inverse voltage 75 V. |
Fairchild Semiconductor |
| 22 |
1N4454 |
400mW 75 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 23 |
1N447 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 24 |
1N454 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 25 |
1N459 |
175 V, 500 mW low leakage diode |
BKC International Electronics |
| 26 |
1N459A |
175 V, 500 mW low leakage diode |
BKC International Electronics |
| 27 |
1N463A |
175 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
| 28 |
1N4761A |
75 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 29 |
1N499 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 30 |
1N5267A |
75 V, 1.7 mA, zener diode |
Leshan Radio Company |
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