| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AM27PS19175BJA |
16/384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
| 2 |
AM27PS191A75BJA |
16/384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
| 3 |
AM27S19175BJA |
16/384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
| 4 |
AM27S191A75BJA |
16/384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
| 5 |
AM27S191SA75BJA |
16/384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
| 6 |
DM7875BJ |
DM7875A/DM8875A, DM7875B/DM8875B TRI-STATE 4-Bit Parallel Binary Multipliers |
National Semiconductor |
| 7 |
HYB314175BJ-50 |
256k x 16 Bit EDO DRAM 3.3 V 50 ns |
Infineon |
| 8 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 9 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 10 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 11 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 12 |
HYB314175BJ-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 13 |
HYB314175BJ-60 |
256k x 16 Bit EDO DRAM 3.3 V 60 ns |
Infineon |
| 14 |
HYB314175BJ-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 15 |
HYB314175BJL-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 16 |
HYB314175BJL-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 17 |
HYB314175BJL-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 18 |
HYB514175BJ-50 |
256k x 16 Bit EDO DRAM 5 V 50 ns |
Infineon |
| 19 |
HYB514175BJ-50 |
-256k x 16-Bit EDO-DRAM |
Siemens |
| 20 |
HYB514175BJ-50 |
256k x 16-Bit EDO-DRAM |
Siemens |
| 21 |
HYB514175BJ-50 |
-256k x 16-Bit EDO-DRAM |
Siemens |
| 22 |
HYB514175BJ-55 |
256k x 16 Bit EDO DRAM 5 V 55 ns |
Infineon |
| 23 |
HYB514175BJ-55 |
256k x 16-Bit EDO-DRAM |
Siemens |
| 24 |
HYB514175BJ-60 |
256k x 16 Bit EDO DRAM 5 V 60 ns |
Infineon |
| 25 |
HYB514175BJ-60 |
256k x 16-Bit EDO-DRAM |
Siemens |
| 26 |
MAX4075BJESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 49V/V, noninverting gain 50V/V, -3dB BW 50kHz. |
MAXIM - Dallas Semiconductor |
| 27 |
MAX4075BJEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 49V/V, noninverting gain 50V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 28 |
MAX4175BJEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 49, 1+ (Rf/Dg) noninverting gain 50, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
| 29 |
MAX4275BJESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 49, 1+ (Rf/Dg) noninverting gain 50, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
| 30 |
MAX4275BJEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 49, 1+ (Rf/Dg) noninverting gain 50, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
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