| No. |
Part Name |
Description |
Manufacturer |
| 1 |
M67784 |
RF Power Module - 889-915MHz, 9.6V, 3.8W, FM portable radio |
Mitsubishi Electric Corporation |
| 2 |
MA27784 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) |
Panasonic |
| 3 |
MA277840G |
Silicon epitaxial planar type |
Panasonic |
| 4 |
NEZ7784-15B |
C-BAND POWER GAAS MESFET |
NEC |
| 5 |
NEZ7784-15BD |
C-BAND POWER GAAS MESFET |
NEC |
| 6 |
NEZ7784-4B |
C-BAND POWER GAAS MESFET |
NEC |
| 7 |
NEZ7784-4BD |
C-BAND POWER GAAS MESFET |
NEC |
| 8 |
NEZ7784-8B |
C-BAND POWER GAAS MESFET |
NEC |
| 9 |
NEZ7784-8BD |
C-BAND POWER GAAS MESFET |
NEC |
| 10 |
NEZ7784-8BD |
C-BAND POWER GAAS MESFET |
NEC |
| 11 |
TA7784 |
DUAL PREAMPLIFIER FOR AUTOREVERSE |
TOSHIBA |
| 12 |
TA7784P |
Dual pre-amplifier for autoreverse. Operating supply voltage Vcc: 3.5V to 15V. Quiescent current: Iccq1 5.5mA,typ; (VIN=0, Normal EQ); Iccq 2 7mA,typ; 11mA,max (VIN=0, Metal EQ). |
Contek Microelectronics |
| 13 |
TA7784P |
DUAL PREAMPLIFIER FOR AUTOREVERSE |
TOSHIBA |
| | | |
