| No. |
Part Name |
Description |
Manufacturer |
| 1 |
NE5500179A-T1 |
SILICON POWER MOS FET |
NEC |
| 2 |
NE5510179A-T1 |
3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
NEC |
| 3 |
NE5510279A-T1 |
3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. |
NEC |
| 4 |
NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 5 |
NE5511279A-T1A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 6 |
NE5520279A-T1 |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 7 |
NE5520379A-T1A |
NEC's 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. |
NEC |
| 8 |
NE552R479A-T1A |
NEC's 3.0 V, 0.25 W, L&S-band medium power silicon LD-MOSFET. |
NEC |
| 9 |
NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET |
NEC |
| 10 |
NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET |
NEC |
| 11 |
NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET |
NEC |
| 12 |
NE6510179A-T1 |
1 W L-BAND POWER GaAs HJ-FET |
NEC |
| 13 |
NE6510379A-T1 |
3 W L-BAND POWER GaAs HJ-FET |
NEC |
| 14 |
NE651R479A-T1 |
0.4 W L-BAND POWER GaAs HJ-FET |
NEC |
| | | |
