No. |
Part Name |
Description |
Manufacturer |
1 |
15KP150 |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
2 |
15KP150C |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
3 |
15KP180 |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
4 |
15KP180C |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
5 |
15KP190A |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
6 |
15KP190CA |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
7 |
15KP200 |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
8 |
15KP200C |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
9 |
1N4736A |
Voltage regulator diode. Working voltage (nom) 6.8 V . |
Philips |
10 |
1N4746A |
Voltage regulator diode. Working voltage (nom) 18 V . |
Philips |
11 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
12 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
13 |
1V040 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 68 V @ 1mA DC test current. |
NTE Electronics |
14 |
2N3375 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
15 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
16 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
17 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
18 |
2V010 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
19 |
2V040 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 68 V @ 1mA DC test current. |
NTE Electronics |
20 |
54VCXH163245 |
Rad-hard 16-bit transceiver, 1.8 V to 3.3 V bi-directional level shifter |
ST Microelectronics |
21 |
A6986 |
Automotive grade 38 V 2 A synchronous step-down switching regulator with 30 uA |
ST Microelectronics |
22 |
A6986TR |
Automotive grade 38 V 2 A synchronous step-down switching regulator with 30 uA |
ST Microelectronics |
23 |
AAT3783A |
1 A Linear Li-Ion/Polymer Battery Charger with 28 V Over-Voltage Protection |
Skyworks Solutions |
24 |
AAT3783AIRN-4.2 |
1 A Linear Li-Ion/Polymer Battery Charger with 28 V Over-Voltage Protection |
Skyworks Solutions |
25 |
ACT4910 |
18 V Power Loss Protection Device with 10 A eFuse |
Qorvo |
26 |
ACT4911 |
8 V Power Loss Protection Device with 10 A eFuse |
Qorvo |
27 |
AD5165 |
256-Position, Ultralow Power 1.8 V Logic-Level Digital Potentiometer |
Analog Devices |
28 |
AD5165BUJZ100-R2 |
256-Position, Ultralow Power 1.8 V Logic-Level Digital Potentiometer |
Analog Devices |
29 |
AD5165BUJZ100-R7 |
256-Position, Ultralow Power 1.8 V Logic-Level Digital Potentiometer |
Analog Devices |
30 |
AD5165EVAL |
256-Position, Ultralow Power 1.8 V Logic-Level Digital Potentiometer |
Analog Devices |
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