No. |
Part Name |
Description |
Manufacturer |
1 |
2722 162 06051 |
ISOLATORS for P.C. Board Mounting, frequency range 2038,5 to 2108,5 MHz |
Philips |
2 |
2722 162 06051 |
ISOLATORS for P.C. Board Mounting, frequency range 2038,5 to 2108,5 MHz |
Philips |
3 |
2722 162 06911 |
VHF Narrow-BAND Circulators/Isolators, frequency range 208,5 to 215,5 MHz |
Philips |
4 |
AM29F080 |
8 Megabit (1,048,576 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
5 |
AM29F800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
6 |
AM29LV008 |
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
Advanced Micro Devices |
7 |
AM29LV800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
Advanced Micro Devices |
8 |
D1721C-XXBS20 |
1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE |
OKI electronic components |
9 |
FM27C010X120 |
1,048,576-Bit (128K x 8)High Performance CMOS EPROM |
Fairchild Semiconductor |
10 |
FM27C010X150 |
1,048,576-Bit (128K x 8)High Performance CMOS EPROM |
Fairchild Semiconductor |
11 |
FM27C010X90 |
1,048,576-Bit (128K x 8)High Performance CMOS EPROM |
Fairchild Semiconductor |
12 |
GM71C18163AJ-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
13 |
GM71C18163AJ-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
14 |
GM71C18163AJ-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
15 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
16 |
GM71C18163AT-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
17 |
GM71C18163AT-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
18 |
GM71C18163C |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
19 |
GM71C18163C-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
20 |
GM71C18163C-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
21 |
GM71C18163C-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
22 |
GM71C18163CJ-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns |
Hynix Semiconductor |
23 |
GM71C18163CJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
24 |
GM71C18163CJ-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns |
Hynix Semiconductor |
25 |
GM71C18163CL-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
26 |
GM71C18163CL-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
27 |
GM71C18163CL-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
28 |
GM71C18163CT-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns |
Hynix Semiconductor |
29 |
GM71C18163CT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
30 |
GM71C18163CT-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns |
Hynix Semiconductor |
| | | |