| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5SMC8.2 A |
TVS: Unidirectional |
Taiwan Semiconductor |
| 2 |
1N4738 |
8.2 V, 1 W silicon zener diode |
BKC International Electronics |
| 3 |
1N4738 |
1 W silicon zener diode. Nominal zener voltage 8.2 V. |
Fairchild Semiconductor |
| 4 |
1N4738 |
1 WATT, 8.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 5 |
1N4738A |
8.2 V, 1 W silicon zener diode |
BKC International Electronics |
| 6 |
1N4738A |
Voltage regulator diode. Working voltage (nom) 8.2 V . |
Philips |
| 7 |
1N5237 |
500 mW silicon zener diode. Nominal zener voltage 8.2 V. |
Fairchild Semiconductor |
| 8 |
1N5237 |
500mW, 8.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 9 |
1N5237A |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 10 |
1N5237AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. Tolerance +-10%. |
Microsemi |
| 11 |
1N5237BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. Tolerance +-5%. |
Microsemi |
| 12 |
1N5237C |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 13 |
1N5237D |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 14 |
1N5237UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. |
Microsemi |
| 15 |
1N5344B |
8.2 V, 150 mA, 5 W glass passivated zener diode |
Fagor |
| 16 |
1N5528A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 17 |
1N5528B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 18 |
1N5528C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 19 |
1N6269 |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 20 |
1N6269A |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 21 |
1N6269C |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 22 |
1N6269CA |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 23 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 24 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 25 |
1N756 |
400mW, 8.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 26 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 27 |
1N756A |
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 28 |
1N756A-1 |
8.2 V, 400 mW silicon zener diode |
BKC International Electronics |
| 29 |
1N756B |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 30 |
1N756C |
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
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