No. |
Part Name |
Description |
Manufacturer |
1 |
MJD18002D2 |
Bipolar NPN Transistor |
ON Semiconductor |
2 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
3 |
MJE18002D2 |
POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
Motorola |
4 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
5 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
6 |
SG8002DB |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR |
Epson Company |
7 |
SG8002DC |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR |
Epson Company |
8 |
UB8002D |
16 bit microprocessor, possibly equivalent Z8002-CPU |
RFT |
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