| No. |
Part Name |
Description |
Manufacturer |
| 1 |
150PFT200 |
V(rrm/drm): 2000V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 2 |
150PFT250 |
V(rrm/drm): 2500V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 3 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 4 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 5 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 6 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 7 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 8 |
2N2221A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 25 hFE. |
Continental Device India Limited |
| 9 |
2N2222 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. |
Continental Device India Limited |
| 10 |
2N2222A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 40 hFE. |
Continental Device India Limited |
| 11 |
800EXD21 |
Silicon alloy-diffused junction rectifier 800A 2500V |
TOSHIBA |
| 12 |
800EXD22 |
Silicon alloy-diffused junction rectifier 800A 2500V |
TOSHIBA |
| 13 |
800FXD21 |
Silicon alloy-diffused junction rectifier 800A 3000V |
TOSHIBA |
| 14 |
800FXD22 |
Silicon alloy-diffused junction rectifier 800A 3000V |
TOSHIBA |
| 15 |
800UD21 |
Silicon alloy-diffused junction rectifier 800A 1600V |
TOSHIBA |
| 16 |
800UD22 |
Silicon alloy-diffused junction rectifier 800A 1600V |
TOSHIBA |
| 17 |
800YD21 |
Silicon alloy-diffused junction rectifier 800A 2000V |
TOSHIBA |
| 18 |
800YD22 |
Silicon alloy-diffused junction rectifier 800A 2000V |
TOSHIBA |
| 19 |
800YKD21 |
Silicon alloy-diffused junction rectifier 800A 2700V |
TOSHIBA |
| 20 |
800YKD22 |
Silicon alloy-diffused junction rectifier 800A 2700V |
TOSHIBA |
| 21 |
AT91M42800A |
The AT91M42800A features 8K bytes of on-chip SRAM, an External Bus Interface, a 6-channel Timer/Counter, 2 USARTs, 2 Master/Slave SPI Interfaces, 3 System Timers and an advanced Power Management Controller. |
Atmel |
| 22 |
AT91M55800A |
The AT91M55800A features 8K bytes of on-chip SRAM, an External Bus Interface, a 6-channel Timer/Counter, 3 USARTs, a Master/Slave SPI Interface, a Watchdog Timer, an 8-channel 10-bit ADC, a 2-channel 10-bit DAC, a Clock Generator, Real-tim |
Atmel |
| 23 |
BC327 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100 - 600 hFE |
Continental Device India Limited |
| 24 |
BC327-10 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 63 - 160 hFE |
Continental Device India Limited |
| 25 |
BC327-16 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100 - 250 hFE |
Continental Device India Limited |
| 26 |
BC327-25 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 160 - 400 hFE |
Continental Device India Limited |
| 27 |
BC327-40 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 250 - 600 hFE |
Continental Device India Limited |
| 28 |
BC327A |
0.625W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 0.800A Ic, 100 - 400 hFE |
Continental Device India Limited |
| 29 |
BC328-10 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.800A Ic, 63 - 160 hFE |
Continental Device India Limited |
| 30 |
BC328-25 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.800A Ic, 160 - 400 hFE |
Continental Device India Limited |
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