| No. |
Part Name |
Description |
Manufacturer |
| 1 |
80610-18 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 2 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 3 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 4 |
AM80610-030 |
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS |
SGS Thomson Microelectronics |
| 5 |
AM80610-030 |
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS |
ST Microelectronics |
| 6 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 7 |
LNV806103A |
Opto-Electronic Device - Visible Light Emitting Diodes - Surface Lighting LEDs |
Panasonic |
| | | |
