| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AN8480NSB |
MortorDrive - Hall Motor |
Panasonic |
| 2 |
AS29LV400B-80SC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 3 |
AS29LV400B-80SI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 4 |
AS29LV400B-80TC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 5 |
AS29LV400B-80TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 6 |
AS29LV400T-80SC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 7 |
AS29LV400T-80SI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 8 |
AS29LV400T-80TC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 9 |
AS29LV400T-80TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 10 |
AS29LV800B-80SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 11 |
AS29LV800B-80SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 12 |
AS29LV800B-80TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 13 |
AS29LV800B-80TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 14 |
AS29LV800T-80SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 15 |
AS29LV800T-80SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 16 |
AS29LV800T-80TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 17 |
AS29LV800T-80TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 18 |
GM71C18163AJ-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
| 19 |
GM71C18163AT-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
| 20 |
GM71CS18163ALJ-8 |
1,048,576 words x 16 bit DRAM, 80ns, low power |
LG Semiconductor |
| 21 |
GM71CS18163ALT-8 |
1,048,576 words x 16 bit DRAM, 80ns, low power |
LG Semiconductor |
| 22 |
HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
| 23 |
HM514100DS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
| 24 |
HM514258AJP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 25 |
HM514258AP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 26 |
HM514258AZP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 27 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 28 |
HM514260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 29 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 30 |
HM514260ALTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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