No. |
Part Name |
Description |
Manufacturer |
1 |
1.5FMCJ200 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 180V(min), 220V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
2 |
1.5FMCJ400A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 380V(min), 420V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
3 |
1.5KE180CA |
1500 Watt mosorb zener transient voltage suppressors, 180V |
ON Semiconductor |
4 |
1.5KE180CARL4 |
1500 Watt mosorb zener transient voltage suppressors, 180V |
ON Semiconductor |
5 |
1.5KE200 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 180V(min), 220V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
6 |
1.5KE400A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 380V(min), 420V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
7 |
1.5SMC180 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 180V. 1500W peak power, 5.0W steady state. |
Motorola |
8 |
1.5SMC180A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 180V. 1500W peak power, 5.0W steady state. |
Motorola |
9 |
10DZ180 |
Voltage Regulator Diode of 10W 180V |
IPRS Baneasa |
10 |
10DZ180 |
10W 180V Zener Diode |
IPRS Baneasa |
11 |
10DZ180P |
10W 180V Zener diode in plastic case |
IPRS Baneasa |
12 |
113CNQ080A |
80V 110A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
13 |
113CNQ080ASL |
80V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
14 |
113CNQ080ASM |
80V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
15 |
123NQ080 |
80V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
16 |
153CMQ080 |
80V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
17 |
15KP180 |
180V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
18 |
15KP180 |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
19 |
15KP180A |
180V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
20 |
15KP180A |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
21 |
15KP180C |
Diode TVS Single Bi-Dir 180V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
22 |
15KP180CA |
Diode TVS Single Bi-Dir 180V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
23 |
15KP280 |
280V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
24 |
15KP280 |
Diode TVS Single Uni-Dir 280V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
25 |
15KP280A |
280V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
26 |
15KP280A |
Diode TVS Single Uni-Dir 280V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
27 |
15KP280C |
Diode TVS Single Bi-Dir 280V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
28 |
15KP280CA |
Diode TVS Single Bi-Dir 280V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
29 |
15KPA180 |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
30 |
15KPA180A |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| | | |