| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2811D |
Zener Voltage Regulator Diode |
Microsemi |
| 2 |
1N2811D |
Diode Zener Single 13V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 3 |
1N2811DE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 4 |
1N4811D |
Varactor Diode |
Motorola |
| 5 |
AME8811DEAT |
300mA CMOS LDO |
AME |
| 6 |
AME8811DEAT |
300mA CMOS LDO |
Analog Microelectronics |
| 7 |
AME8811DEFT |
300mA CMOS LDO |
AME |
| 8 |
AME8811DEFT |
300mA CMOS LDO |
Analog Microelectronics |
| 9 |
AOZ8811DI |
ESD TVS Transient Voltage Suppressors |
Alpha & Omega Semiconductor |
| 10 |
AOZ8811DT-03 |
ESD TVS Transient Voltage Suppressors |
Alpha & Omega Semiconductor |
| 11 |
FT0811DD |
400 V, 25 mA surface mount TRIAC |
Fagor |
| 12 |
FT0811DH |
400 V, 25 mA high commutation TRIAC |
Fagor |
| 13 |
FT0811DI |
400 V, 25 mA high commutation TRIAC |
Fagor |
| 14 |
JAN1N2811D |
Zener Voltage Regulator Diode |
Microsemi |
| 15 |
JANTX1N2811D |
Zener Voltage Regulator Diode |
Microsemi |
| 16 |
JANTXV1N2811D |
Zener Voltage Regulator Diode |
Microsemi |
| 17 |
K4E160811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 18 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 19 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 20 |
K4E170811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 21 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 22 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 23 |
K4E660811D, K4E640811D |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 24 |
K4E660811D, K4E640811D |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 25 |
K4F160811D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 26 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 27 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 28 |
K4F170811D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 29 |
K4F170811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 30 |
K4F170811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
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